SiC epitaxial wafer are used in a variety of electronic components such as: Shockley Diodes, MOSFET, JFET, BJT, Thyristor, GTO and IGBT. Please refer to our 4"~6" SiC specifications or contact us directly.
4H-SiC Epi-Wafer Standard Specification (150mm & 100mm & 76.2mm)
Wafer orientation : Epitaxy is only available for off-axis substrates | ||
Doping | ||
n-type | p-type | |
Dopant | Nitrogen | Aluminum |
Net Doping Density | ND-NA | NA-ND |
Silicon Face | 9E14~1E19cm-3 | 9E14~1E19cm-3 |
Tolerance | ± 15% | ± 50% |
Uniformity | ≦ 10% | ≦ 20% |
Thickness: 0.2~100µm | ||
Tolerance | ± 10% | |
Uniformity | ≦ 5% |
Characteristics | Acceptable Limits | Definitions | Test Methods |
Epi Defects | 2mm*2mm die yield ≥ 95% |
Defects only include triangular defects, downfalls, carrots and comets. | candela CS920 |
Edge Chips | ≦ 2 with radius 1.5mm | Areas where material has been unintentionally peeled off from the wafer | High Intensity illumination |
Scratches | ≦ 10 lines total and the total length of these lines should be less than wafer diameter | Grooves or cuts below the surface plane of the wafer having a length-to-width ratio of greater than 5 to 1 | |
Surface Roughness | <0.5mm | 20µm*20µm scanned by AFM | |
Backside Cleanliness | 100% clean | None contamination | |
Thickness | see specification table | Thickness is determined as an average value across the wafer by FTIR | FTIR |
Net doping | see specification table | Net doping is determined as an average value across the wafer by MCV. | MCV |
SiC Epi-Wafer thickness Uniformity Distribution Chart
mean value(µm): | 12.04 |
sigma/mean: | 1.28% |
(max-min)/(max+min): | 3.04% |
SiC Epi-Wafer Doping Unformity Distribution Chart
mean value(cm-3): | 7.9515 |
sigma/mean: | 3.48% |
(max-min)/(max+min): | 9.97% |